Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Normand, P; Dimitrakis, P; Kapetanakis, E; Skarlatos, D; Beltsios, K; Tsoukalas, D; Bonafos, C; Coffin, H; Benassayag, G; Claverie, A; Soncini, V; Agarwal, A; Sohl, Ch; Ameen, M

dc.contributor.author	Normand, P	en
dc.contributor.author	Dimitrakis, P	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Beltsios, K	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Bonafos, C	en
dc.contributor.author	Coffin, H	en
dc.contributor.author	Benassayag, G	en
dc.contributor.author	Claverie, A	en
dc.contributor.author	Soncini, V	en
dc.contributor.author	Agarwal, A	en
dc.contributor.author	Sohl, Ch	en
dc.contributor.author	Ameen, M	en
dc.date.accessioned	2014-03-01T02:42:55Z
dc.date.available	2014-03-01T02:42:55Z
dc.date.issued	2004	en
dc.identifier.issn	01679317	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31142
dc.subject	Ion beam synthesis	en
dc.subject	Nanocrystal memory	en
dc.subject	Non-volatile memory	en
dc.subject	Silicon implantation	en
dc.subject	Silicon nanocrystals	en
dc.subject.other	Ion beams	en
dc.subject.other	Ion implantation	en
dc.subject.other	MOS capacitors	en
dc.subject.other	Nonvolatile storage	en
dc.subject.other	Plasma applications	en
dc.subject.other	PROM	en
dc.subject.other	Semiconducting silicon	en
dc.subject.other	Threshold voltage	en
dc.subject.other	Ion beam synthesis	en
dc.subject.other	Nanocrystal memory	en
dc.subject.other	Prototype devices	en
dc.subject.other	Silicon nanocrystals	en
dc.subject.other	Nanostructured materials	en
dc.title	Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mee.2004.03.043	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mee.2004.03.043	en
heal.publicationDate	2004	en
heal.abstract	Recent fabrication issues encountered during the synthesis of silicon nanocrystals in thin SiO2 films by the technique of ultra-low energy ion implantation and subsequent thermal treatment (ULE-IBS) are presented. The effects of charge neutralization of the implanted species, energy contamination and post-implantation cleaning process on the electrical and structural properties of the processed oxides are described, with emphasis upon the technological options to control them. While much research is still required for industrial exploitation of ULE-IBS in the fabrication of competitive and reproducible memory structures, promising results for prototype devices aiming at low-voltage non-volatile memory applications have been obtained and are here reported. © 2004 Elsevier B.V. All rights reserved.	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/j.mee.2004.03.043	en
dc.identifier.volume	73-74	en
dc.identifier.spage	730	en
dc.identifier.epage	735	en