Interstitial injection during oxidation of very low energy nitrogen-implanted silicon

Skarlatos, D; Tsamis, C; Perego, M; Fanciulli, M; Tsoukalas, D

dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Perego, M	en
dc.contributor.author	Fanciulli, M	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:43:23Z
dc.date.available	2014-03-01T02:43:23Z
dc.date.issued	2005	en
dc.identifier.issn	0921-5107	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31380
dc.subject	Interstitial injection	en
dc.subject	MOS	en
dc.subject	Nitrogen-implanted silicon	en
dc.subject.classification	Materials Science, Multidisciplinary	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	Diffusion	en
dc.subject.other	Ion implantation	en
dc.subject.other	MOS devices	en
dc.subject.other	Nitrogen	en
dc.subject.other	Oxidation	en
dc.subject.other	Reaction kinetics	en
dc.subject.other	Reliability	en
dc.subject.other	Dry oxidation	en
dc.subject.other	Interstitial injection	en
dc.subject.other	MOS	en
dc.subject.other	Nitrogen-implanted silicon	en
dc.subject.other	Silicon	en
dc.title	Interstitial injection during oxidation of very low energy nitrogen-implanted silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.mseb.2005.08.028	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.mseb.2005.08.028	en
heal.language	English	en
heal.publicationDate	2005	en
heal.abstract	Oxidation of nitrogen-implanted silicon is one of the methods developed in order to incorporate nitrogen within a growing thermal gate oxide in order to improve its reliability in the ultra thin (< 4 nm) regime. The main advantage of the method is that it enables the formation of various oxide thicknesses across the silicon substrate by performing local nitrogen implantations of various dose and using one single oxidation step, which is very helpful especially for Systems On Chip fabrication. It is also known that oxidation of silicon causes an interstitial injection into the silicon substrate, which enhances the diffusivity of boron, which diffuses via an interstitial-mediated mechanism, in the transistor channel area causing fluctuations in the MOS (Metal-Oxide-Semiconductor) transistor threshold voltage. In this article we present a study of interstitial injection during oxidation of very low energy nitrogen-implanted silicon using boron delta-layers as interstitial monitors. No interstitial injection enhancement in comparison to common dry oxidation was observed. This result is different from N2O oxynitridation, during which an enhancement of interstitial injection of the order of 20-25% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. One possible explanation, supported also by other experiments, is that implanted nitrogen acts as an interstitial sink. In particular, it seems that nitrogen "captures" the excess interstitials produced by implantation and oxidation during its non-Fickian diffusion towards the surface. (c) 2005 Elsevier B.V. All rights reserved.	en
heal.publisher	ELSEVIER SCIENCE SA	en
heal.journalName	Materials Science and Engineering B: Solid-State Materials for Advanced Technology	en
dc.identifier.doi	10.1016/j.mseb.2005.08.028	en
dc.identifier.isi	ISI:000233895800062	en
dc.identifier.volume	124-125	en
dc.identifier.issue	SUPPL.	en
dc.identifier.spage	314	en
dc.identifier.epage	318	en