Formation of Silicon Ultra Shallow Junction by nonmelt excimer laser treatment

Florakis, A; Papadimitriou, A; Chatzipanagiotis, N; Tsoukalas, D; Misra, N; Grigoropoulos, C

dc.contributor.author	Florakis, A	en
dc.contributor.author	Papadimitriou, A	en
dc.contributor.author	Chatzipanagiotis, N	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Misra, N	en
dc.contributor.author	Grigoropoulos, C	en
dc.date.accessioned	2014-03-01T02:46:10Z
dc.date.available	2014-03-01T02:46:10Z
dc.date.issued	2009	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32582
dc.subject	Excimer Laser	en
dc.subject	Experimental Data	en
dc.subject	Kinetic Monte Carlo	en
dc.subject	Software Tool	en
dc.subject.other	45nm node	en
dc.subject.other	Advanced process	en
dc.subject.other	Experimental data	en
dc.subject.other	Extensive simulations	en
dc.subject.other	Nanosecond lasers	en
dc.subject.other	Plasma doping	en
dc.subject.other	Process steps	en
dc.subject.other	Sentaurus process	en
dc.subject.other	Simulation approach	en
dc.subject.other	Synopsys	en
dc.subject.other	Ultra shallow junction	en
dc.subject.other	Underlying mechanism	en
dc.subject.other	Excimer lasers	en
dc.subject.other	Gas lasers	en
dc.subject.other	Laser surgery	en
dc.subject.other	Plasmas	en
dc.subject.other	Computer software	en
dc.title	Formation of Silicon Ultra Shallow Junction by nonmelt excimer laser treatment	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ESSDERC.2009.5331602	en
heal.identifier.secondary	5331602	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ESSDERC.2009.5331602	en
heal.publicationDate	2009	en
heal.abstract	Implementation of Plasma Doping and nanosecond laser annealing in the non-melt regime has shown to hold great promise for the realization of Ultra Shallow Junctions, designed for the sub 45nm node. This work includes extensive simulation of these two emerging techniques using the Synopsys Sentaurus Process software tool which are compared with experimental data after each process step. The results reveal consistency between simulation and experiment. It is thus concluded that existing simulation approach based mostly on Kinetic Monte-Carlo method allows for sufficient physical understanding of the underlying mechanisms for these advanced process steps. ©2009 IEEE.	en
heal.journalName	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference	en
dc.identifier.doi	10.1109/ESSDERC.2009.5331602	en
dc.identifier.spage	284	en
dc.identifier.epage	287	en