Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling

Pantelides, S; Tsetseris, L; Becka, M; Rashkeev, S; Hadjisavvas, G; Batyrev, I; Tuttle, B; Marinopoulos, A; Zhou, X; Fleetwood, D; Schrimpf, R

dc.contributor.author	Pantelides, S	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Becka, M	en
dc.contributor.author	Rashkeev, S	en
dc.contributor.author	Hadjisavvas, G	en
dc.contributor.author	Batyrev, I	en
dc.contributor.author	Tuttle, B	en
dc.contributor.author	Marinopoulos, A	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Schrimpf, R	en
dc.date.accessioned	2014-03-01T02:46:18Z
dc.date.available	2014-03-01T02:46:18Z
dc.date.issued	2009	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32647
dc.subject	Band Gap	en
dc.subject	Energy Levels	en
dc.subject	Quantum Mechanical Calculation	en
dc.subject	Radiation Effect	en
dc.subject	Low Dose	en
dc.subject	Negative Bias Temperature Instability	en
dc.title	Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ESSDERC.2009.5331355	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ESSDERC.2009.5331355	en
heal.publicationDate	2009	en
heal.abstract	The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale	en
heal.journalName	Solid-State Device Research European Conference	en
dc.identifier.doi	10.1109/ESSDERC.2009.5331355	en