Formation of silicon ultra shallow junction by non-melt excimer laser treatment

Florakis, A; Papadimitriou, A; Chatzipanagiotis, N; Misra, N; Grigoropoulos, C; Tsoukalas, D

dc.contributor.author	Florakis, A	en
dc.contributor.author	Papadimitriou, A	en
dc.contributor.author	Chatzipanagiotis, N	en
dc.contributor.author	Misra, N	en
dc.contributor.author	Grigoropoulos, C	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T02:46:48Z
dc.date.available	2014-03-01T02:46:48Z
dc.date.issued	2010	en
dc.identifier.issn	0038-1101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/32862
dc.subject	Boron diffusion kinetics	en
dc.subject	Excimer Laser Annealing	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Applied	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	45nm node	en
dc.subject.other	Activation behavior	en
dc.subject.other	Advanced process	en
dc.subject.other	Analytical calculation	en
dc.subject.other	Annealing condition	en
dc.subject.other	Boron diffusions	en
dc.subject.other	Dopant profile	en
dc.subject.other	Electrical activation	en
dc.subject.other	Excimer laser annealing	en
dc.subject.other	Experimental data	en
dc.subject.other	Extensive simulations	en
dc.subject.other	Kinetic Monte Carlo	en
dc.subject.other	KrF excimer laser	en
dc.subject.other	Nanosecond lasers	en
dc.subject.other	Plasma doping	en
dc.subject.other	Sentaurus process	en
dc.subject.other	Simulation prediction	en
dc.subject.other	Surface temperatures	en
dc.subject.other	Synopsys	en
dc.subject.other	Temperature gradient	en
dc.subject.other	Ultra shallow junction	en
dc.subject.other	Underlying mechanism	en
dc.subject.other	Boron	en
dc.subject.other	Boron compounds	en
dc.subject.other	Computer software	en
dc.subject.other	Diffusion in solids	en
dc.subject.other	Doping (additives)	en
dc.subject.other	Excimer lasers	en
dc.subject.other	Gas lasers	en
dc.subject.other	Krypton	en
dc.subject.other	Plasmas	en
dc.subject.other	Secondary ion mass spectrometry	en
dc.subject.other	Annealing	en
dc.title	Formation of silicon ultra shallow junction by non-melt excimer laser treatment	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1016/j.sse.2010.04.025	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2010.04.025	en
heal.language	English	en
heal.publicationDate	2010	en
heal.abstract	Implementation of plasma doping and nanosecond laser annealing in the non-melt regime has shown to hold great promise for the realization of ultra shallow junctions, designed for the sub 45 nm node. This work includes extensive simulation of these two emerging techniques using the Synopsys Sentaurus Process software tool, in direct comparison with experimental data for each step involved in the process. Analytical calculations were performed in order to investigate the interaction of the KrF Excimer Laser Annealing and silicon regarding the temperature gradients induced into silicon and the boron diffusion kinetics. On the other hand, analytically obtained surface temperature profiles of each annealing condition, were used as input to KMC calculations of the boron diffusion and activation behavior. Simulation predictions, in accordance with SIMS measurements revealed very limited dopant profile movement (maximum 2.5 nm), combined with high levels of electrical activation close to the maximum theoretically predicted ones. As the results obtained by calculations are in consistency with the experimental, it is evident that the combination of both analytical and Kinetic Monte Carlo tools, allows for sufficient physical understanding of the underlying mechanisms for these advanced process steps. (C) 2010 Elsevier Ltd. All rights reserved.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	Solid-State Electronics	en
dc.identifier.doi	10.1016/j.sse.2010.04.025	en
dc.identifier.isi	ISI:000280322300014	en
dc.identifier.volume	54	en
dc.identifier.issue	9	en
dc.identifier.spage	903	en
dc.identifier.epage	908	en