Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO2 interface on silicon

Gaiseanu, F; Kurger, D; Dimitriadis, C; Stocmenos, J; Postolache, C; Tsoukalas, D; Tsoi, E; Goustouridis, D

dc.contributor.author	Gaiseanu, F	en
dc.contributor.author	Kurger, D	en
dc.contributor.author	Dimitriadis, C	en
dc.contributor.author	Stocmenos, J	en
dc.contributor.author	Postolache, C	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Tsoi, E	en
dc.contributor.author	Goustouridis, D	en
dc.date.accessioned	2014-03-01T02:48:28Z
dc.date.available	2014-03-01T02:48:28Z
dc.date.issued	1997	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33836
dc.subject	Phosphorus	en
dc.title	Influence of the restructuring process on the phosphorus doping near the polysilicon/SiO2 interface on silicon	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/SMICND.1997.651551	en
heal.identifier.secondary	http://dx.doi.org/10.1109/SMICND.1997.651551	en
heal.publicationDate	1997	en
heal.abstract	We investigate the influence of structural modifications on the phosphorus doping of thin (0.4 μm) LP-CVD polysilicon layers deposited at 620°C on SiO2 films intentionally grown with a thickness of 4 nm on a (111) oriented, silicon substrate. The measurements by XTEM and SIMS permitted to correlate the structure modifications with the doping properties after the various drive-in diffusion conditions	en
heal.journalName	Semiconductor, International Conference	en
dc.identifier.doi	10.1109/SMICND.1997.651551	en