Stress control for process optimization of the capacitive pressure sensors for biomedical applications achieved by surface micromachining technology

Gaiseanu, F; Postolache, C; Dascalu, D; Esteve, J; Tsoukalas, D; Jachowicz, R; Badoiu, A; Vasile, E

dc.contributor.author	Gaiseanu, F	en
dc.contributor.author	Postolache, C	en
dc.contributor.author	Dascalu, D	en
dc.contributor.author	Esteve, J	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Jachowicz, R	en
dc.contributor.author	Badoiu, A	en
dc.contributor.author	Vasile, E	en
dc.date.accessioned	2014-03-01T02:48:39Z
dc.date.available	2014-03-01T02:48:39Z
dc.date.issued	1998	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/33984
dc.subject	Biomedical Application	en
dc.subject	Diffusion Process	en
dc.subject	Phosphorus	en
dc.subject	Pressure Sensor	en
dc.subject	Process Optimization	en
dc.subject	Residual Stress	en
dc.subject	Surface Micromachining	en
dc.title	Stress control for process optimization of the capacitive pressure sensors for biomedical applications achieved by surface micromachining technology	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/SMICND.1998.732280	en
heal.identifier.secondary	http://dx.doi.org/10.1109/SMICND.1998.732280	en
heal.publicationDate	1998	en
heal.abstract	An integrated structure of capacitive pressure sensor for biomedical applications achieved by surface micromachining technology, consisting in the pressure sensor and a testing component is presented. The test structure permitted to apply the pull-in voltage method for the evaluation of the residual stress in the polysilicon layer on the basis of a new form of the set of two equations	en
heal.journalName	Semiconductor, International Conference	en
dc.identifier.doi	10.1109/SMICND.1998.732280	en