MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

Kapetanakis, E; Normand, P; Tsoukalas, D; Kamoulakos, G; Kouvatsos, D; Stoemenos, J; Zhang, S; Berg, J; Armour, D

dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Kamoulakos, G	en
dc.contributor.author	Kouvatsos, D	en
dc.contributor.author	Stoemenos, J	en
dc.contributor.author	Zhang, S	en
dc.contributor.author	Berg, J	en
dc.contributor.author	Armour, D	en
dc.date.accessioned	2014-03-01T02:48:59Z
dc.date.available	2014-03-01T02:48:59Z
dc.date.issued	2000	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34182
dc.subject	Interface States	en
dc.subject	Ion Implantation	en
dc.subject	Low Energy	en
dc.subject	Low Voltage	en
dc.subject	Metal Oxide Semiconductor Field Effect Transistor	en
dc.title	MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ESSDERC.2000.194818	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ESSDERC.2000.194818	en
heal.publicationDate	2000	en
heal.abstract	Metal Oxide Semiconductor Field Effect Transistor (MOSFET) memory devices using silicon nanocrystals as charge storage elements have been fabricated. The nanocrystals are obtained by Si ion implantation at very low energy (1keV) into a thin thermal oxide (8 nm) and subsequent annealing. The memory characteristics of the devices under static and dynamic operation are reported. These devices exhibit fast write/erase	en
heal.journalName	Solid-State Device Research European Conference	en
dc.identifier.doi	10.1109/ESSDERC.2000.194818	en