Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates

Tsamakis, D; Sargentis, C; Kuznetsov, A; Lampakis, D

dc.contributor.author	Tsamakis, D	en
dc.contributor.author	Sargentis, C	en
dc.contributor.author	Kuznetsov, A	en
dc.contributor.author	Lampakis, D	en
dc.date.accessioned	2014-03-01T02:49:19Z
dc.date.available	2014-03-01T02:49:19Z
dc.date.issued	2003	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/34503
dc.subject	Electrical Resistance	en
dc.subject	Raman Spectra	en
dc.title	Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1109/ISDRS.2003.1272046	en
heal.identifier.secondary	http://dx.doi.org/10.1109/ISDRS.2003.1272046	en
heal.publicationDate	2003	en
heal.abstract	In this paper, we report the electrical resistivity (ρ) and Hall coefficient measurements (RH), of two strained n-Si1-xGex/Si heterostructure samples in the temperature range 80-350 K. The thickness of the epilayers were 1 and 0.2 μm while the nominal P doping levels were 6×1017 and 5×1018 cm-3 for x=0.05 and 0.22 respectively. The Si substrate resistivity was 18 Ωcm, two	en
heal.journalName	Semiconductor Device Research International Symposium	en
dc.identifier.doi	10.1109/ISDRS.2003.1272046	en