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Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates

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Electrical parameters in highly doped strained n-Si1-xGex epilayers grown on Si substrates

Tsamakis, D; Sargentis, C; Kuznetsov, A; Lampakis, D
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/34503
Date: 2003

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