Deposition of uniform size metallic nanoparticles for use in non volatile memories

Verrelli, E; Tsoukalas, D; Giannakopoulos, K; Ioannou, D

dc.contributor.author	Verrelli, E	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Giannakopoulos, K	en
dc.contributor.author	Ioannou, D	en
dc.date.accessioned	2014-03-01T02:51:04Z
dc.date.available	2014-03-01T02:51:04Z
dc.date.issued	2007	en
dc.identifier.issn	02729172	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35337
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-38549094611&partnerID=40&md5=3aac58da12653e8e8dff40ff32ba126d	en
dc.subject.other	High-vacuum technique	en
dc.subject.other	Memory windows	en
dc.subject.other	Data storage equipment	en
dc.subject.other	Electron tunneling	en
dc.subject.other	Insulating materials	en
dc.subject.other	Nanoparticles	en
dc.subject.other	Nickel	en
dc.subject.other	Silica	en
dc.subject.other	Nonvolatile storage	en
dc.title	Deposition of uniform size metallic nanoparticles for use in non volatile memories	en
heal.type	conferenceItem	en
heal.publicationDate	2007	en
heal.abstract	In this work we investigate the non-volatile memory behavior of Ni nanoparticles embedded within an insulating matrix. Nickel nanoparticles are deposited at room temperature by a new high-vacuum technique over a 4 nm tunneling thermal SiO2 layer followed by the deposition of HfO2 as a control insulator. Memory windows of ∼ 1.5V are observed in MOS capacitors at gate pulse voltages of 8 V. Charge retention for write and erase state clearly indicate long time charge storage behavior. © 2007 Materials Research Society.	en
heal.journalName	Materials Research Society Symposium Proceedings	en
dc.identifier.volume	997	en
dc.identifier.spage	115	en
dc.identifier.epage	120	en