Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates

Patsis, GP; Drygiannakis, D; Tsikrikas, N; Raptis, I; Gogolides, E

dc.contributor.author	Patsis, GP	en
dc.contributor.author	Drygiannakis, D	en
dc.contributor.author	Tsikrikas, N	en
dc.contributor.author	Raptis, I	en
dc.contributor.author	Gogolides, E	en
dc.date.accessioned	2014-03-01T02:51:38Z
dc.date.available	2014-03-01T02:51:38Z
dc.date.issued	2008	en
dc.identifier.issn	0277786X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/35591
dc.subject	Electron-beam lithography	en
dc.subject	EUVL mask	en
dc.subject	LER	en
dc.subject	LWR	en
dc.subject	Metrology	en
dc.subject	Process simulation	en
dc.subject	Resist modeling	en
dc.subject	Stochastic	en
dc.subject.other	LER	en
dc.subject.other	LWR	en
dc.subject.other	Process simulations	en
dc.subject.other	Resist modeling	en
dc.subject.other	Stochastic	en
dc.subject.other	Dissolution	en
dc.subject.other	Electron beam lithography	en
dc.subject.other	Electrons	en
dc.subject.other	Extreme ultraviolet lithography	en
dc.subject.other	Fabrication	en
dc.subject.other	Masks	en
dc.subject.other	Measurements	en
dc.subject.other	Multilayers	en
dc.subject.other	Nanotechnology	en
dc.subject.other	Roughness measurement	en
dc.subject.other	Stochastic systems	en
dc.subject.other	Substrates	en
dc.subject.other	Units of measurement	en
dc.subject.other	Process control	en
dc.title	Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1117/12.769392	en
heal.identifier.secondary	69222K	en
heal.identifier.secondary	http://dx.doi.org/10.1117/12.769392	en
heal.publicationDate	2008	en
heal.abstract	Strong candidate lithography for the mass production of devices at the 32nm technology node and beyond is extreme ultra violet lithography (EUVL). The mask used in EUVL is a complex set of layers. The material composition and thickness of each layer should be considered explicitly in an attempt to model the deposited energy in the resist film during fabrication of mask features using electron-beam lithography. Targeting to sub-32nm technology even with the reduction by 4 of the mask features on the wafer level, lithography should consider accurate fabrication features on the mask level of the order of 50nm. Therefore, detailed simulation of the electron-beam fabrication process, as well as the resist dissolution mechanism and etching is demanding. In this work an attempt is initiated targeting in combining two simulation techniques i.e., the electron-beam simulation, with the stochastic lithography simulation, in a common simulation platform. This way it will be possible to get detailed information of the fine details of the fabricated features, taking into account the multilayer substrate of the mask, and the resist material properties. The e-beam simulation algorithm is presented and used to expose a layout. The calculated energy deposition in the resist level, initially determined considering resist material to be continuous, is used in the discrete representation of the resist. With appropriate threshold in the exposure energy, also acid diffusion could be taken into consideration. Stochastic development of the resist material, delivers line-edge roughness (LER) and critical dimension (CD) on the resist level, in terms of polymer chain architecture.	en
heal.journalName	Proceedings of SPIE - The International Society for Optical Engineering	en
dc.identifier.doi	10.1117/12.769392	en
dc.identifier.volume	6922	en