Dependence of sensitivity of SnOx thin-film gas sensors on vacancy defects

Vlachos, DS; Papadopoulos, CA; Avaritsiotis, JN

dc.contributor.author	Vlachos, DS	en
dc.contributor.author	Papadopoulos, CA	en
dc.contributor.author	Avaritsiotis, JN	en
dc.date.accessioned	2014-03-01T11:44:25Z
dc.date.available	2014-03-01T11:44:25Z
dc.date.issued	1996	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36934
dc.relation.uri	http://www.scopus.com/inward/record.url?eid=2-s2.0-0011460554&partnerID=40&md5=fe715d3291e318539c7b560ca10fcf62	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	CO	en
dc.title	Dependence of sensitivity of SnOx thin-film gas sensors on vacancy defects	en
heal.type	other	en
heal.language	English	en
heal.publicationDate	1996	en
heal.abstract	Oxygen flow during dc reactive sputtering of SnOx thin films affects film conductivity in zero grade air and gas sensitivity to carbon monoxide and ethanol. The experimental results show that an increase in oxygen flow during film deposition produces films exhibiting higher conductivity in zero grade air and lower gas sensitivity. A theoretical model is presented that explains this behavior. The proposed model takes into account both the dependence of conductivity on the potential barrier height at grain boundaries of the film and the dependence of chemisorption rate of oxygen on free-electron availability. The theoretical analysis is in good qualitative agreement with experiment. (C) 1996 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.isi	ISI:A1996VU98700077	en
dc.identifier.volume	80	en
dc.identifier.issue	10	en
dc.identifier.spage	6050	en
dc.identifier.epage	6054	en