dc.contributor.author |
Anastassakis, E |
en |
dc.contributor.author |
Cardona, M |
en |
dc.date.accessioned |
2014-03-01T11:45:41Z |
|
dc.date.available |
2014-03-01T11:45:41Z |
|
dc.date.issued |
1998 |
en |
dc.identifier.issn |
0080-8784 |
en |
dc.identifier.uri |
https://dspace.lib.ntua.gr/xmlui/handle/123456789/37561 |
|
dc.subject.classification |
Engineering, Electrical & Electronic |
en |
dc.subject.classification |
Physics, Condensed Matter |
en |
dc.subject.other |
III-V-SEMICONDUCTORS |
en |
dc.subject.other |
MOLECULAR-BEAM EPITAXY |
en |
dc.subject.other |
BACKWARD RAMAN-SCATTERING |
en |
dc.subject.other |
MULTIPLE-QUANTUM-WELLS |
en |
dc.subject.other |
BOND-CHARGE MODEL |
en |
dc.subject.other |
INTERNAL PIEZOELECTRIC FIELDS |
en |
dc.subject.other |
GROUP-IV SEMICONDUCTORS |
en |
dc.subject.other |
AB-INITIO CALCULATION |
en |
dc.subject.other |
ATOMIC LAYER EPITAXY |
en |
dc.subject.other |
CUBIC BORON-NITRIDE |
en |
dc.title |
Phonons, strains, and pressure in semiconductors |
en |
heal.type |
other |
en |
heal.language |
English |
en |
heal.publicationDate |
1998 |
en |
heal.publisher |
ACADEMIC PRESS INC |
en |
heal.journalName |
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II |
en |
heal.bookName |
SEMICONDUCTORS AND SEMIMETALS |
en |
dc.identifier.isi |
ISI:000079323300003 |
en |
dc.identifier.volume |
55 |
en |
dc.identifier.spage |
117 |
en |
dc.identifier.epage |
233 |
en |