Phonons, strains, and pressure in semiconductors

Anastassakis, E; Cardona, M

dc.contributor.author	Anastassakis, E	en
dc.contributor.author	Cardona, M	en
dc.date.accessioned	2014-03-01T11:45:41Z
dc.date.available	2014-03-01T11:45:41Z
dc.date.issued	1998	en
dc.identifier.issn	0080-8784	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/37561
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	III-V-SEMICONDUCTORS	en
dc.subject.other	MOLECULAR-BEAM EPITAXY	en
dc.subject.other	BACKWARD RAMAN-SCATTERING	en
dc.subject.other	MULTIPLE-QUANTUM-WELLS	en
dc.subject.other	BOND-CHARGE MODEL	en
dc.subject.other	INTERNAL PIEZOELECTRIC FIELDS	en
dc.subject.other	GROUP-IV SEMICONDUCTORS	en
dc.subject.other	AB-INITIO CALCULATION	en
dc.subject.other	ATOMIC LAYER EPITAXY	en
dc.subject.other	CUBIC BORON-NITRIDE	en
dc.title	Phonons, strains, and pressure in semiconductors	en
heal.type	other	en
heal.language	English	en
heal.publicationDate	1998	en
heal.publisher	ACADEMIC PRESS INC	en
heal.journalName	HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II	en
heal.bookName	SEMICONDUCTORS AND SEMIMETALS	en
dc.identifier.isi	ISI:000079323300003	en
dc.identifier.volume	55	en
dc.identifier.spage	117	en
dc.identifier.epage	233	en