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Phonons, strains, and pressure in semiconductors

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dc.contributor.author Anastassakis, E en
dc.contributor.author Cardona, M en
dc.date.accessioned 2014-03-01T11:45:41Z
dc.date.available 2014-03-01T11:45:41Z
dc.date.issued 1998 en
dc.identifier.issn 0080-8784 en
dc.identifier.uri http://hdl.handle.net/123456789/37561
dc.subject.classification Engineering, Electrical & Electronic en
dc.subject.classification Physics, Condensed Matter en
dc.subject.other III-V-SEMICONDUCTORS en
dc.subject.other MOLECULAR-BEAM EPITAXY en
dc.subject.other BACKWARD RAMAN-SCATTERING en
dc.subject.other MULTIPLE-QUANTUM-WELLS en
dc.subject.other BOND-CHARGE MODEL en
dc.subject.other INTERNAL PIEZOELECTRIC FIELDS en
dc.subject.other GROUP-IV SEMICONDUCTORS en
dc.subject.other AB-INITIO CALCULATION en
dc.subject.other ATOMIC LAYER EPITAXY en
dc.subject.other CUBIC BORON-NITRIDE en
dc.title Phonons, strains, and pressure in semiconductors en
heal.type other en
heal.language English en
heal.publicationDate 1998 en
heal.publisher ACADEMIC PRESS INC en
heal.journalName HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II en
heal.bookName SEMICONDUCTORS AND SEMIMETALS en
dc.identifier.isi ISI:000079323300003 en
dc.identifier.volume 55 en
dc.identifier.spage 117 en
dc.identifier.epage 233 en


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