Εκτίμηση της Πιθανότητας Αποτυχίας FinFET SRAM κυττάρων υπό Στατική και Χρονικά Εξαρτώμενη Μεταβλητότητα

Μαραγκουδάκη, Ελένη; Giannelis, Georgios

dc.contributor.author	Μαραγκουδάκη, Ελένη	el
dc.contributor.author	Giannelis, Georgios	en
dc.date.accessioned	2017-07-25T07:52:42Z
dc.date.available	2017-07-25T07:52:42Z
dc.date.issued	2017-07-25
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/45354
dc.identifier.uri	http://dx.doi.org/10.26240/heal.ntua.14496
dc.rights	Αναφορά Δημιουργού - Παρόμοια Διανομή 3.0 Ελλάδα	*
dc.rights.uri	http://creativecommons.org/licenses/by-sa/3.0/gr/	*
dc.subject	Πιθανότητα αποτυχίας	el
dc.subject	Στατική μεταβλητότητα	el
dc.subject	Χρονικά εξαρτώμενη μεταβλητότητα	el
dc.subject	Αξιοπιστία	el
dc.subject	Στατική μνήμη τυχαίας προσπέλασης	el
dc.subject	Bias temperature instability	en
dc.subject	Most probable failure point	el
dc.subject	FinFET	el
dc.subject	Static noise margin	el
dc.subject	Reliability	el
dc.title	Εκτίμηση της Πιθανότητας Αποτυχίας FinFET SRAM κυττάρων υπό Στατική και Χρονικά Εξαρτώμενη Μεταβλητότητα	el
dc.title	Estimating the Failure Probability of FinFET-based SRAM Cells under Time-Zero and Time-Dependent Variability	en
dc.contributor.department	Microprocessors and Digital Systems Lab	el
heal.type	bachelorThesis
heal.classification	Hardware-in-the-loop simulation	en
heal.classificationURI	http://id.loc.gov/authorities/subjects/sh2012002849
heal.language	el
heal.language	en
heal.access	free
heal.recordProvider	ntua	el
heal.publicationDate	2017-03-16
heal.abstract	Due to the aggressive downscaling of devices, the reliability issue has come to surface. The everlasting demand for the shrinking of dimensions has led to the introduction of the multi-gate, three dimensional FinFET device. The complexity of the new device compared to planar CMOS renders the estimation of the failure probability (PFAIL) of integrated circuits (IC) even more difficult. The main threat of a system’s reliability is the variability provoked by time-zero phenomena during the manufacturing process and time-dependent effects, with Bias Temperature Instability (BTI) being the dominant one. The model that accurately explicates BTI is the atomistic one which efficiently captures the stochastic nature of this degradation mechanism. Techniques that were widely-used for the evaluation of the PFAIL although they were effective for older technologies, when it comes to modern downscaled devices either require a colossal number of simulations or lead to inaccurate results. Therefore, in this work we focus on the Most Probable Failure Point (MPFP) methodology and we explore the accuracy limits of the standard approach against a state-of-the-art one. We examine the stability of a 6T Static Random Access Memory (SRAM) cell since it is a component highly vulnerable to degradation and we use the Static Noise Margin (SNM) for the hold operation as metric. We compare the results of the two concepts and we verify our claim that the MPFP methodology is much more realistic, using the Monte Carlo technique.	en
heal.advisorName	Σούντρης, Δημήτριος	el
heal.committeeMemberName	Πεκμεστζή, Κιαμάλ	el
heal.committeeMemberName	Σούντρης, Δημήτριος	el
heal.committeeMemberName	Ξανθάκης, Ιωάννης	el
heal.academicPublisher	Εθνικό Μετσόβιο Πολυτεχνείο. Σχολή Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών. Τομέας Επικοινωνιών, Ηλεκτρονικής και Συστημάτων Πληροφορικής	el
heal.academicPublisherID	ntua
heal.numberOfPages	57 σ.	el
heal.fullTextAvailability	true