Etching of SiO2 features in fluorocarbon plasmas: Explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches

Kokkoris, G; Gogolides, E; Boudouvis, AG

dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Gogolides, E	en
dc.contributor.author	Boudouvis, AG	en
dc.date.accessioned	2014-03-01T01:17:50Z
dc.date.available	2014-03-01T01:17:50Z
dc.date.issued	2002	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/14683
dc.subject.classification	Physics, Applied	en
dc.subject.other	CYCLOTRON-RESONANCE PLASMA	en
dc.subject.other	HIGH-DENSITY PLASMAS	en
dc.subject.other	SILICON DIOXIDE	en
dc.subject.other	SIMULATION	en
dc.subject.other	MODEL	en
dc.subject.other	LAG	en
dc.subject.other	DEPOSITION	en
dc.subject.other	SURFACE	en
dc.subject.other	RATES	en
dc.title	Etching of SiO2 features in fluorocarbon plasmas: Explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1435833	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1435833	en
heal.language	English	en
heal.publicationDate	2002	en
heal.abstract	A model to calculate etching rates in SiO2 features in fluorocarbon plasmas is presented. The model can predict several aspect ratio dependent phenomena such as reactive ion etching (RIE) lag, etch stop, inverse RIE lag, and aspect ratio independent etching (ARIE) at least for a limited range of aspect ratio values. The model includes three components: (a) a surface model for open area etching of SiO2 (and Si) [Gogolides et al., J. Appl. Phys. 88, 5570 (2000)]; (b) a flux calculator, which calculates local fluxes on each elementary surface of the feature being etched; and (c) a coupling of the two models (a) and (b), the focal point of coupling being the simultaneous calculation of the neutral species fluxes and the corresponding effective sticking coefficients. The model is applied for trench etching and the gas phase conditions considered correspond to a generic fluorocarbon gas. A different approach is presented by which the gas phase composition is divided (i.e., mapped) into regions leading to (a) deposition, (b) RIE lag with no etch stop, (c) intense RIE lag and etch stop, (d) inverse RIE lag, and (e) ARIE. Based on the proposed model an explanation of the aspect ratio dependent phenomena and ARIE is attempted, and a comparison with experimental data is done. Two parameters were found to be important in this explanation: the polymer surface coverage at the bottom of the etched feature and the effective sticking coefficients of the neutral species on the sidewalls of the etched feature. © 2002 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1435833	en
dc.identifier.isi	ISI:000174182400017	en
dc.identifier.volume	91	en
dc.identifier.issue	5	en
dc.identifier.spage	2697	en
dc.identifier.epage	2707	en