Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation

Skarlatos, D; Kapetanakis, E; Normand, P; Tsamis, C; Perego, M; Ferrari, S; Fanciulli, M; Tsoukalas, D

dc.contributor.author	Skarlatos, D	en
dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsamis, C	en
dc.contributor.author	Perego, M	en
dc.contributor.author	Ferrari, S	en
dc.contributor.author	Fanciulli, M	en
dc.contributor.author	Tsoukalas, D	en
dc.date.accessioned	2014-03-01T01:21:12Z
dc.date.available	2014-03-01T01:21:12Z
dc.date.issued	2004	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/16130
dc.subject.classification	Physics, Applied	en
dc.subject.other	Approximation theory	en
dc.subject.other	Capacitance	en
dc.subject.other	Electric conductance	en
dc.subject.other	Electron energy levels	en
dc.subject.other	Electron tunneling	en
dc.subject.other	Fermi level	en
dc.subject.other	Ion implantation	en
dc.subject.other	Leakage currents	en
dc.subject.other	MOS devices	en
dc.subject.other	Nitrogen	en
dc.subject.other	Oxidation	en
dc.subject.other	Parameter estimation	en
dc.subject.other	Rapid thermal annealing	en
dc.subject.other	Reduction	en
dc.subject.other	Substrates	en
dc.subject.other	Interface states	en
dc.subject.other	Low energy implantation	en
dc.subject.other	State-of-the-art process flow	en
dc.subject.other	Thermal oxidation	en
dc.subject.other	Tunneling currents	en
dc.subject.other	Silicon	en
dc.title	Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation	en
heal.type	journalArticle	en
heal.identifier.primary	10.1063/1.1739286	en
heal.identifier.secondary	http://dx.doi.org/10.1063/1.1739286	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	In a previous work [Skarlatos , J. Appl. Phys. 93, 1832 (2003)] we investigated the influence of implantation energy on oxide growth and defect formation in nitrogen-implanted silicon substrates. It was shown that as the implantation energy decreases from medium to very low values the oxide reduction decreases. This was attributed to nitrogen out-diffusion, which is more effective when nitrogen is placed closer to the silicon surface. On the other hand very low implantation energy avoids the formation of dislocation loops in the silicon substrate, a key point for modern devices performance. In this second part we compare the nitrogen distribution and electrical properties of ultrathin (25-30 Angstrom) oxides grown under the same oxidation conditions on very low (3 keV) and medium (25 keV) energy nitrogen-implantated silicon. Nitrogen distribution measurements show that a lower content of nitrogen remains within the oxides formed using 3 keV energy as compared to the 25 keV case supporting the results of the first part of this work. So at very low implantation energy the same oxide thickness is obtained increasing the implantation dose. On the other hand oxides formed through very low energy implants show superior electrical properties in terms of surface states and leakage currents due to the lower damage induced in the silicon substrate. (C) 2004 American Institute of Physics.	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	Journal of Applied Physics	en
dc.identifier.doi	10.1063/1.1739286	en
dc.identifier.isi	ISI:000222093300046	en
dc.identifier.volume	96	en
dc.identifier.issue	1	en
dc.identifier.spage	300	en
dc.identifier.epage	309	en