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Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation

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Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2+ implantation

Skarlatos, D; Kapetanakis, E; Normand, P; Tsamis, C; Perego, M; Ferrari, S; Fanciulli, M; Tsoukalas, D
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/16130
Date: 2004

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