Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells

Arpatzanis, N; Hastas, NA; Dimitriadis, CA; Konstantinidis, G; Charitidis, C; Song, JD; Choi, WJ; Lee, JI

dc.contributor.author	Arpatzanis, N	en
dc.contributor.author	Hastas, NA	en
dc.contributor.author	Dimitriadis, CA	en
dc.contributor.author	Konstantinidis, G	en
dc.contributor.author	Charitidis, C	en
dc.contributor.author	Song, JD	en
dc.contributor.author	Choi, WJ	en
dc.contributor.author	Lee, JI	en
dc.date.accessioned	2014-03-01T01:31:45Z
dc.date.available	2014-03-01T01:31:45Z
dc.date.issued	2009	en
dc.identifier.issn	0370-1972	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/19917
dc.subject	Rapid Thermal Anneal	en
dc.subject	schottky diode	en
dc.subject	Temperature Dependence	en
dc.subject	Quantum Dot	en
dc.subject.classification	Physics, Condensed Matter	en
dc.subject.other	LAYER	en
dc.subject.other	CAP	en
dc.title	Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells	en
heal.type	journalArticle	en
heal.identifier.primary	10.1002/pssb.200880580	en
heal.identifier.secondary	http://dx.doi.org/10.1002/pssb.200880580	en
heal.language	English	en
heal.publicationDate	2009	en
heal.abstract	The effect of rapid thermal annealing temperature on the trap properties of Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells have been investigated by capacitance-voltage (C -V) and low frequency noise (LFN) measurements in both reverse and forward bias regimes. The current noise spectra show 1/f behaviour and generation-recombination (g-r) noise, attributed to uniformly distributed traps in energy and to a discrete trap level in the energy band-gap of the GaAs capping layer, respectively. The experimental results show that the annealing temperature is closely related with the level of these noise sources. The apparent doping concentrations, calculated from the C -V characteristics, indicate that the density of trapping states near the buffer layer interface is increased as the annealing temperature increases. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en
heal.publisher	WILEY-V C H VERLAG GMBH	en
heal.journalName	Physica Status Solidi (B) Basic Research	en
dc.identifier.doi	10.1002/pssb.200880580	en
dc.identifier.isi	ISI:000265403600042	en
dc.identifier.volume	246	en
dc.identifier.issue	4	en
dc.identifier.spage	880	en
dc.identifier.epage	884	en