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Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells

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Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells

Arpatzanis, N; Hastas, NA; Dimitriadis, CA; Konstantinidis, G; Charitidis, C; Song, JD; Choi, WJ; Lee, JI
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/19917
Date: 2009

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