Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells
Αποθετήριο DSpace/Manakin
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Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2 Ga0.8 As wells