Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases

Gogolides, E; Grigoropoulos, S; Nassiopoulos, A

dc.contributor.author	Gogolides, E	en
dc.contributor.author	Grigoropoulos, S	en
dc.contributor.author	Nassiopoulos, A	en
dc.date.accessioned	2014-03-01T01:43:09Z
dc.date.available	2014-03-01T01:43:09Z
dc.date.issued	1995	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/24070
dc.subject	Reactive Ion Etching	en
dc.subject	Room Temperature	en
dc.subject	Aspect Ratio	en
dc.title	Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/0167-9317(94)00143-I	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0167-9317(94)00143-I	en
heal.publicationDate	1995	en
heal.abstract	Silicon reactive ion etching using a mixture of SF6 and CHF3 at room temperature was investigated. The etching characteristics as a function of gas composition, rf power, pressure and masking material as well as electrode material were studied. Highly anisotropic, vertical and with smooth surface silicon pillars, lines and trenches with aspect ratios as high as 25:1 with dimensions down	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/0167-9317(94)00143-I	en