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Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases

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Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases

Gogolides, E; Grigoropoulos, S; Nassiopoulos, A
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/24070
Date: 1995

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