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Raman study of photostructural changes in amorphous Ge x Sb 0.4− x S 0.6 1 Originally presented at the 17th International Conference on Amorphous Semiconductors (ICAMS-17), Budapest, 25–29 August 1997. 1

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Raman study of photostructural changes in amorphous Ge x Sb 0.4− x S 0.6 1 Originally presented at the 17th International Conference on Amorphous Semiconductors (ICAMS-17), Budapest, 25–29 August 1997. 1

Kotsalas, I; Papadimitriou, D; Raptis, C; Vlcek, M; Frumar, M
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/25084
Date: 1998

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