Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

Gogolides, E; Vauvert, P; Kokkoris, G; Turban, G; Boudouvis, AG

dc.contributor.author	Gogolides, E	en
dc.contributor.author	Vauvert, P	en
dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Turban, G	en
dc.contributor.author	Boudouvis, AG	en
dc.date.accessioned	2014-03-01T01:49:52Z
dc.date.available	2014-03-01T01:49:52Z
dc.date.issued	2000	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/25950
dc.subject.classification	Physics, Applied	en
dc.subject.other	PRESSURE SF6 PLASMA	en
dc.subject.other	FLUORINATED SILICON	en
dc.subject.other	ENERGY-DEPENDENCE	en
dc.subject.other	FILM DEPOSITION	en
dc.subject.other	FREE-RADICALS	en
dc.subject.other	IONS	en
dc.subject.other	CHF3	en
dc.subject.other	TEMPERATURE	en
dc.subject.other	MECHANISMS	en
dc.subject.other	SIMULATOR	en
dc.title	Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition	en
heal.type	journalArticle	en
heal.language	English	en
heal.publicationDate	2000	en
heal.abstract	A surface model is presented for the etching of silicon (Si) and silicon dioxide (SiO2) in fluorocarbon plasmas. Etching and deposition are accounted for using a generalized concept for the "polymer surface coverage," which is found to be equivalent to a normalized fluorocarbon film thickness covering the etched surfaces. The model coefficients are obtained from fits to available beam experimental data, while the model results are successfully compared with high-density plasma etching data. (C) 2000 American Institute of Physics. [S0021-8979(00)02521-4].	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	JOURNAL OF APPLIED PHYSICS	en
dc.identifier.isi	ISI:000165068700009	en
dc.identifier.volume	88	en
dc.identifier.issue	10	en
dc.identifier.spage	5570	en
dc.identifier.epage	5584	en