Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides

Kapetanakis, E; Normand, P; Tsoukalas, D; Beltsios, K

dc.contributor.author	Kapetanakis, E	en
dc.contributor.author	Normand, P	en
dc.contributor.author	Tsoukalas, D	en
dc.contributor.author	Beltsios, K	en
dc.date.accessioned	2014-03-01T01:51:32Z
dc.date.available	2014-03-01T01:51:32Z
dc.date.issued	2002	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26358
dc.subject	Electric Field	en
dc.subject	implantable device	en
dc.subject	Low Energy	en
dc.subject	Room Temperature	en
dc.subject	Single Electron Tunneling	en
dc.subject	Threshold Voltage	en
dc.subject	High Dose	en
dc.subject	Low Dose	en
dc.title	Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/S0167-9317(02)00483-5	en
heal.identifier.secondary	http://dx.doi.org/10.1016/S0167-9317(02)00483-5	en
heal.publicationDate	2002	en
heal.abstract	The charge storage properties of n-channel MOS transistors with 1 keV Si implanted gate oxides are investigated for 1 and 2×1016 cm−2 Si densities through gate bias (Vg) and time (t) dependent source-drain current (Ids) measurements. Low dose implanted devices exhibit a continuous (trap-like) charge storage process under both static and dynamic conditions in contrast to the high dose implanted	en
heal.journalName	Microelectronic Engineering	en
dc.identifier.doi	10.1016/S0167-9317(02)00483-5	en