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Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides
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Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides
Kapetanakis, E
;
Normand, P
;
Tsoukalas, D
;
Beltsios, K
URI:
https://dspace.lib.ntua.gr/xmlui/handle/123456789/26358
Date:
2002
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Δημοσιεύσεις μελών Δ.Ε.Π. σε περιοδικά
[21402]
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