Impact of 7.5MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

Hayama, K; Takakura, K; Ohyama, H; Rafi, J; Mercha, A; Simoen, E; Claeys, C; Kokkoris, M

dc.contributor.author	Hayama, K	en
dc.contributor.author	Takakura, K	en
dc.contributor.author	Ohyama, H	en
dc.contributor.author	Rafi, J	en
dc.contributor.author	Mercha, A	en
dc.contributor.author	Simoen, E	en
dc.contributor.author	Claeys, C	en
dc.contributor.author	Kokkoris, M	en
dc.date.accessioned	2014-03-01T01:53:22Z
dc.date.available	2014-03-01T01:53:22Z
dc.date.issued	2004	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/26984
dc.subject	Silicon On Insulator	en
dc.subject	Threshold Voltage	en
dc.subject	Fully Depleted	en
dc.subject	Metal Oxide Semiconductor Field Effect Transistor	en
dc.title	Impact of 7.5MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TNS.2004.839153	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TNS.2004.839153	en
heal.publicationDate	2004	en
heal.abstract	The degradation of deep submicron (0.1 μm) fully depleted (FD)-silicon-on-insulator (SOI) n-channel metal oxide semiconductor field effect transistors (MOSFETs) subjected to 7.5-MeV proton irradiation is reported. The radiation-induced damage is investigated by studying the static characteristics of devices with different geometries and bias conditions. Special attention is paid to the analysis of the front-back gate coupling effect by changing the	en
heal.journalName	IEEE Transactions on Nuclear Science	en
dc.identifier.doi	10.1109/TNS.2004.839153	en