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Impact of 7.5MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

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Impact of 7.5MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

Hayama, K; Takakura, K; Ohyama, H; Rafi, J; Mercha, A; Simoen, E; Claeys, C; Kokkoris, M
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/26984
Date: 2004

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