Effects of Switched-bias Annealing on Charge Trapping in HfO2 Gate Dielectrics

Zhou, X; Fleetwood, D; Tsetseris, L; Schrimpf, R; Pantelides, S

dc.contributor.author	Zhou, X	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Schrimpf, R	en
dc.contributor.author	Pantelides, S	en
dc.date.accessioned	2014-03-01T01:54:56Z
dc.date.available	2014-03-01T01:54:56Z
dc.date.issued	2006	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/27535
dc.subject	Charge Density	en
dc.subject	Charge Injection	en
dc.subject	Defect Density	en
dc.subject	High Energy	en
dc.subject	Ionizing Radiation	en
dc.subject	Low Energy	en
dc.subject	Mos Device	en
dc.subject	Radiation Hardness	en
dc.subject	X Rays	en
dc.subject	Constant Voltage Stress	en
dc.subject	Negative Bias Temperature Instability	en
dc.title	Effects of Switched-bias Annealing on Charge Trapping in HfO2 Gate Dielectrics	en
heal.type	journalArticle	en
heal.identifier.primary	10.1109/TNS.2006.884249	en
heal.identifier.secondary	http://dx.doi.org/10.1109/TNS.2006.884249	en
heal.publicationDate	2006	en
heal.abstract	Charge trapping characteristics are investigated for MOS capacitors with 6.8 nm HfO2 layers and 1.0 nm interfacial silicon oxynitrides; the effective oxide thickness of the high-kappa gate dielectric layers is 2.1 nm. These devices were irradiated with 10-keV X-rays or subjected to constant voltage stress, and then annealed for ten minute intervals of alternating positive and negative gate bias at	en
heal.journalName	IEEE Transactions on Nuclear Science	en
dc.identifier.doi	10.1109/TNS.2006.884249	en