Effects of Switched-bias Annealing on Charge Trapping in HfO2 Gate Dielectrics

Zhou, X; Fleetwood, D; Tsetseris, L; Schrimpf, R; Pantelides, S

URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/27535

Date: 2006

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Δημοσιεύσεις μελών Δ.Ε.Π. σε περιοδικά [21402]

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