Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling

Pantelides, S; Tsetseris, L; Beck, M; Rashkeev, S; Hadjisavvas, G; Batyrev, I; Tuttle, B; Marinopoulos, A; Zhou, X; Fleetwood, D; Schrimpf, R

dc.contributor.author	Pantelides, S	en
dc.contributor.author	Tsetseris, L	en
dc.contributor.author	Beck, M	en
dc.contributor.author	Rashkeev, S	en
dc.contributor.author	Hadjisavvas, G	en
dc.contributor.author	Batyrev, I	en
dc.contributor.author	Tuttle, B	en
dc.contributor.author	Marinopoulos, A	en
dc.contributor.author	Zhou, X	en
dc.contributor.author	Fleetwood, D	en
dc.contributor.author	Schrimpf, R	en
dc.date.accessioned	2014-03-01T01:59:29Z
dc.date.available	2014-03-01T01:59:29Z
dc.date.issued	2010	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/28942
dc.subject	Band Gap	en
dc.subject	Energy Levels	en
dc.subject	Quantum Mechanical Calculation	en
dc.subject	Radiation Effect	en
dc.subject	Low Dose	en
dc.subject	Negative Bias Temperature Instability	en
dc.title	Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.sse.2010.04.041	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.sse.2010.04.041	en
heal.publicationDate	2010	en
heal.abstract	The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale	en
heal.journalName	Solid-state Electronics	en
dc.identifier.doi	10.1016/j.sse.2010.04.041	en