Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals

Eric, M; Petrovic, S; Kokkoris, M; Lagoyannis, A; Paneta, V; Harissopulos, S; Telecki, I

dc.contributor.author	Eric, M	en
dc.contributor.author	Petrovic, S	en
dc.contributor.author	Kokkoris, M	en
dc.contributor.author	Lagoyannis, A	en
dc.contributor.author	Paneta, V	en
dc.contributor.author	Harissopulos, S	en
dc.contributor.author	Telecki, I	en
dc.date.accessioned	2014-03-01T02:08:36Z
dc.date.available	2014-03-01T02:08:36Z
dc.date.issued	2012	en
dc.identifier.issn	0168583X	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/29685
dc.subject	Channeling implantation	en
dc.subject	Nuclear Reaction Analysis	en
dc.subject	RBS/C	en
dc.subject	Silicon amorphization	en
dc.subject.other	Computer simulation codes	en
dc.subject.other	Depth profile	en
dc.subject.other	High energy	en
dc.subject.other	Ion fluences	en
dc.subject.other	Nitrogen depth profiles	en
dc.subject.other	Nitrogen depth profiling	en
dc.subject.other	Nitrogen ions	en
dc.subject.other	Nuclear Reaction Analysis	en
dc.subject.other	Nuclear reactions	en
dc.subject.other	Oriented silicon	en
dc.subject.other	RBS/C	en
dc.subject.other	Silicon amorphization	en
dc.subject.other	Silicon crystal	en
dc.subject.other	Silicon matrix	en
dc.subject.other	Amorphization	en
dc.subject.other	Computer simulation	en
dc.subject.other	Crystals	en
dc.subject.other	Ion implantation	en
dc.subject.other	Ions	en
dc.subject.other	Nitrogen	en
dc.subject.other	Nuclear physics	en
dc.subject.other	Depth profiling	en
dc.title	Depth profiling of high energy nitrogen ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals	en
heal.type	journalArticle	en
heal.identifier.primary	10.1016/j.nimb.2011.12.008	en
heal.identifier.secondary	http://dx.doi.org/10.1016/j.nimb.2011.12.008	en
heal.publicationDate	2012	en
heal.abstract	This work reports on the experimentally obtained depth profiles of 4 MeV14N2+ ions implanted in the 〈1 0 0〉, 〈1 1 0〉 and randomly oriented silicon crystals. The ion fluence was 1017 particles/cm2. The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of14N(d,α0)12C and14N(d,α1)12C nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen ""bubble"" formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation. © 2011 Elsevier B.V. All rights reserved.	en
heal.journalName	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en
dc.identifier.doi	10.1016/j.nimb.2011.12.008	en
dc.identifier.volume	274	en
dc.identifier.spage	87	en
dc.identifier.epage	92	en