Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution

Kokkoris, G; Tserepi, A; Boudouvis, AG; Gogolides, E

dc.contributor.author	Kokkoris, G	en
dc.contributor.author	Tserepi, A	en
dc.contributor.author	Boudouvis, AG	en
dc.contributor.author	Gogolides, E	en
dc.date.accessioned	2014-03-01T02:42:58Z
dc.date.available	2014-03-01T02:42:58Z
dc.date.issued	2004	en
dc.identifier.issn	0734-2101	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/31160
dc.subject	microelectromechanical system	en
dc.subject.classification	Materials Science, Coatings & Films	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	Aspect ratio	en
dc.subject.other	Computer simulation	en
dc.subject.other	Deposition	en
dc.subject.other	Electric reactors	en
dc.subject.other	Emission spectroscopy	en
dc.subject.other	Fluorocarbons	en
dc.subject.other	Magnetic flux	en
dc.subject.other	Mathematical models	en
dc.subject.other	Microelectromechanical devices	en
dc.subject.other	Microelectronics	en
dc.subject.other	Optoelectronic devices	en
dc.subject.other	Plasmas	en
dc.subject.other	Plastic films	en
dc.subject.other	Profilometry	en
dc.subject.other	Reactive ion etching	en
dc.subject.other	Silica	en
dc.subject.other	Gas flux	en
dc.subject.other	Microtrenching	en
dc.subject.other	Optical emission spectroscopy	en
dc.subject.other	Polymer films	en
dc.subject.other	Etching	en
dc.title	Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution	en
heal.type	conferenceItem	en
heal.identifier.primary	10.1116/1.1738660	en
heal.identifier.secondary	http://dx.doi.org/10.1116/1.1738660	en
heal.language	English	en
heal.publicationDate	2004	en
heal.abstract	A combined simulator linking gas flux data from a plasma reactor (experimental or simulated) to the feature profile evolution during etching/deposition processes is described. This combined simulator results from the coupling of surface etch, local flux calculation, and profile evolution modules. It is a modular tool, in the sense that different phenomena, surface models, and structures can be incorporated. In this work the combined simulator is applied in two processes: (a) in SiO2 feature etching to simulate reactive ion etching (RIE) lag and inverse RIE lag and (b) in etching of high aspect ratio Si trenches using the Bosch process. The profile evolution algorithm of the combined simulator, namely, the level set method, is applied to a process where etching and deposition occur, and tracking of two materials (Si and polymer formed during the Bosch deposition step) is needed. (C) 2004 American Vacuum Society.	en
heal.publisher	A V S AMER INST PHYSICS	en
heal.journalName	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films	en
dc.identifier.doi	10.1116/1.1738660	en
dc.identifier.isi	ISI:000223322000142	en
dc.identifier.volume	22	en
dc.identifier.issue	4	en
dc.identifier.spage	1896	en
dc.identifier.epage	1902	en