THE APPLICABILITY OF LOGARITHMIC EXTREME-VALUE DISTRIBUTIONS IN ELECTOMIGRATION INDUCED FAILURES OF AL/CU THIN-FILM INTERCONNECTS

LOUPIS, MI; AVARITSIOTIS, JN

dc.contributor.author	LOUPIS, MI	en
dc.contributor.author	AVARITSIOTIS, JN	en
dc.date.accessioned	2014-03-01T11:44:24Z
dc.date.available	2014-03-01T11:44:24Z
dc.date.issued	1995	en
dc.identifier.issn	0026-2714	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/36932
dc.subject	Electromigration	en
dc.subject	Extreme Value Distribution	en
dc.subject	Failure Rate	en
dc.subject	Grain Size	en
dc.subject	Log-normal Distribution	en
dc.subject	Statistical Model	en
dc.subject	Thin Film	en
dc.subject.classification	Engineering, Electrical & Electronic	en
dc.subject.classification	Nanoscience & Nanotechnology	en
dc.subject.classification	Physics, Applied	en
dc.subject.other	ELECTROMIGRATION FAILURE	en
dc.subject.other	MODEL	en
dc.title	THE APPLICABILITY OF LOGARITHMIC EXTREME-VALUE DISTRIBUTIONS IN ELECTOMIGRATION INDUCED FAILURES OF AL/CU THIN-FILM INTERCONNECTS	en
heal.type	other	en
heal.identifier.primary	10.1016/0026-2714(95)93079-P	en
heal.identifier.secondary	http://dx.doi.org/10.1016/0026-2714(95)93079-P	en
heal.language	English	en
heal.publicationDate	1995	en
heal.abstract	In electromigration failure studies it is in general assumed that electromigration induced failures may be adequately modelled by a log normal distribution. Further to this it has been argued that a log normal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu+TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the line width. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.	en
heal.publisher	PERGAMON-ELSEVIER SCIENCE LTD	en
heal.journalName	MICROELECTRONICS AND RELIABILITY	en
dc.identifier.doi	10.1016/0026-2714(95)93079-P	en
dc.identifier.isi	ISI:A1995QJ90500016	en
dc.identifier.volume	35	en
dc.identifier.issue	3	en
dc.identifier.spage	611	en
dc.identifier.epage	617	en