Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996)

De Wolf, I; Anastassakis, E

dc.contributor.author	De Wolf, I	en
dc.contributor.author	Anastassakis, E	en
dc.date.accessioned	2014-03-01T11:45:43Z
dc.date.available	2014-03-01T11:45:43Z
dc.date.issued	1999	en
dc.identifier.issn	0021-8979	en
dc.identifier.uri	https://dspace.lib.ntua.gr/xmlui/handle/123456789/37587
dc.subject.classification	Physics, Applied	en
dc.title	Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996)	en
heal.type	other	en
heal.language	English	en
heal.publicationDate	1999	en
heal.abstract	Micro-Raman spectroscopy is often applied to measure local mechanical stress in silicon microelectronics devices. A procedure was proposed [De Wolf et al., J. Appl. Phys. 79, 7148 (1996)] for deriving quantitative information about the stress from the Raman spectra. The calculations were shown to be less tedious when performed in the reference system of the sample, as suggested by Anastassakis [Light Scattering in Semiconductor Structures and Superlattices, (Plenum, New York, 1991), p. 173]. However, there are a few errors in some equations in De Wolf et al. We give here the correct equations, and discuss the consequences of the errors. An alternative convenient approach is recommended. (C) 1999 American Institute of Physics. [S0021-8979(99)03510-0].	en
heal.publisher	AMER INST PHYSICS	en
heal.journalName	JOURNAL OF APPLIED PHYSICS	en
dc.identifier.isi	ISI:000080136000075	en
dc.identifier.volume	85	en
dc.identifier.issue	10	en
dc.identifier.spage	7484	en
dc.identifier.epage	7485	en