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Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996)

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Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996)

De Wolf, I; Anastassakis, E
URI: https://dspace.lib.ntua.gr/xmlui/handle/123456789/37587
Date: 1999

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